STS1DNC45 vs STS1DN45K3 vs STS1DN45

 
PartNumberSTS1DNC45STS1DN45K3STS1DN45
DescriptionMOSFET N-Ch 450 Volt 0.4 AMOSFET Dual N-Ch 450V 0.5A 3.2 ohm SuperMESH3
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOIC-8SOIC-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage450 V450 V-
Id Continuous Drain Current400 mA500 mA-
Rds On Drain Source Resistance4.1 Ohms3.8 Ohms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge7 nC--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W1.7 W-
ConfigurationDualDual-
Channel ModeEnhancement--
TradenameSuperMESH--
PackagingReelReelDigi-ReelR
Height1.65 mm--
Length5 mm--
ProductMOSFET Small Signal--
SeriesSTS1DNC45STS1DN45K3SuperMESH3
Transistor Type2 N-Channel2 N-Channel-
TypeMOSFET--
Width4 mm--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time4 ns--
Product TypeMOSFETMOSFET-
Rise Time4 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn On Delay Time6.7 ns--
Unit Weight0.002998 oz0.017870 oz-
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 N-Channel (Dual)
Power Max--1.3W
Drain to Source Voltage Vdss--450V
Input Capacitance Ciss Vds--150pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--500mA
Rds On Max Id Vgs--3.8 Ohm @ 500mA, 10V
Vgs th Max Id--4.5V @ 50μA
Gate Charge Qg Vgs--6nC @ 10V
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