STU4N62K3 vs STU4N52K3 vs STU4N62K

 
PartNumberSTU4N62K3STU4N52K3STU4N62K
DescriptionMOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3MOSFET N-Ch 525V 2.1 Ohm 2.5A SuperMESH 3
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-251-3TO-251-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage620 V525 V-
Id Continuous Drain Current3.8 A2.5 A-
Rds On Drain Source Resistance2 Ohms2.6 Ohms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge22 nC11 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation70 W45 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameSuperMESHMDmesh-
PackagingTubeTube-
SeriesSTU4N62K3STU4N52K3-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time19 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns7 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time29 ns21 ns-
Typical Turn On Delay Time10 ns8 ns-
Unit Weight0.139332 oz0.139332 oz-
Top