STU6N60M2 vs STU6N60DM2 vs STU6N62

 
PartNumberSTU6N60M2STU6N60DM2STU6N62
DescriptionMOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
RoHSY-Details
TechnologySi-Si
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3IPAK-3IPAK-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V600 V620 V
Id Continuous Drain Current4.5 A5 A5.5 A
Rds On Drain Source Resistance1.2 Ohms1.1 Ohms1.28 Ohms
Vgs th Gate Source Threshold Voltage3 V3.25 V-
Vgs Gate Source Voltage25 V25 V30 V
Qg Gate Charge8 nC6.2 nC34 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation60 W60 W90 W
ConfigurationSingleSingleSingle
TradenameMDmesh--
PackagingTube-Tube
SeriesSTU6N60M2-N-channel MDmesh
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time22.5 ns19.6 ns19 ns
Product TypeMOSFETMOSFET-
Rise Time7.4 ns5.6 ns12.5 ns
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns12 ns27 ns
Typical Turn On Delay Time9.5 ns9.2 ns13 ns
Unit Weight0.139332 oz-0.139332 oz
Channel Mode-EnhancementEnhancement
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