PartNumber | STW18NM60N | STW18NM60N,W18NM60N | STW18NM60ND |
Description | MOSFET N-channel 600 V 0.27ohms 13A Mdmesh | MOSFET N-CH 600V 13A TO-247 | |
Manufacturer | STMicroelectronics | - | ST |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 13 A | - | - |
Rds On Drain Source Resistance | 260 mOhms | - | - |
Configuration | Single | - | Single |
Tradename | MDmesh | - | - |
Packaging | Tube | - | Tube |
Series | STW18NM60N | - | N-channel MDmesh |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | STMicroelectronics | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 600 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 1.340411 oz | - | 1.340411 oz |
Package Case | - | - | TO-247-3 |
Pd Power Dissipation | - | - | 130 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 18 ns |
Rise Time | - | - | 15.5 ns |
Vgs Gate Source Voltage | - | - | 25 V |
Id Continuous Drain Current | - | - | 13 A |
Vds Drain Source Breakdown Voltage | - | - | 650 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 290 mOhms |
Typical Turn Off Delay Time | - | - | 13 ns |
Typical Turn On Delay Time | - | - | 55 ns |
Qg Gate Charge | - | - | 34 nC |