PartNumber | STW19NM50N | STW19NM60N | STW19NM50N,19NM50N |
Description | MOSFET POWER MOSFET N-CH 500V 13A | MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM) | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | 600 V | - |
Id Continuous Drain Current | 14 A | 13 A | - |
Rds On Drain Source Resistance | 250 mOhms | 260 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | 3 V | - |
Vgs Gate Source Voltage | 2 V | 25 V | - |
Qg Gate Charge | 34 nC | 35 nC | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 110 W | 110 W | - |
Configuration | Single | Single | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Tube | Tube | - |
Series | STW19NM50N | STW19NM60N | - |
Transistor Type | N-Channel | 1 N-Channel | - |
Type | MDmesh II Power MOSFET | - | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 17 ns | 25 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 16 ns | 15 ns | - |
Factory Pack Quantity | 600 | 600 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 61 ns | 55 ns | - |
Typical Turn On Delay Time | 12 ns | 12 ns | - |
Unit Weight | 1.340411 oz | 1.340411 oz | - |
Minimum Operating Temperature | - | - 55 C | - |
Channel Mode | - | Enhancement | - |
Qualification | - | AEC-Q101 | - |