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| PartNumber | STW20N90K5 | STW20N95DK5 | STW20N95K |
| Description | MOSFET N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package | MOSFET N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh DK5 Power MOSFET in TO-247 package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | 950 V | - |
| Id Continuous Drain Current | 20 A | 18 A | - |
| Rds On Drain Source Resistance | 210 mOhms | 275 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 40 nC | 50.7 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 250 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | MDmesh | - |
| Series | STW20N90K5 | STW20N95DK5 | MDmesh K5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 16 ns | 25.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13.5 ns | 23 ns | - |
| Factory Pack Quantity | 600 | 600 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 64.7 ns | 74 ns | - |
| Typical Turn On Delay Time | 20.2 ns | 23 ns | - |
| Unit Weight | 0.156264 oz | 0.211644 oz | 0.011640 oz |
| Packaging | - | - | Tube |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 250 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 17.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 950 V |
| Rds On Drain Source Resistance | - | - | 330 mOhms |
| Qg Gate Charge | - | - | 40 nC |