STW30NM60N vs STW30NM60D vs STW30NM60ND

 
PartNumberSTW30NM60NSTW30NM60DSTW30NM60ND
DescriptionMOSFET N-channel 600V, 25A Power II MdmeshMOSFET N-Ch 600 Volt 30 AmpMOSFET N-channel 600V, 25A FDMesh II
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current25 A30 A25 A
Rds On Drain Source Resistance130 mOhms145 mOhms130 mOhms
Vgs Gate Source Voltage30 V30 V25 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation190 W312 W190 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
Height20.15 mm--
Length15.75 mm--
SeriesSTB30NM60NSTW30NM60DSTB30NM60ND
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.15 mm--
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time70 ns35 ns75 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time24 ns33 ns50 ns
Factory Pack Quantity1600600
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time125 ns75 ns110 ns
Typical Turn On Delay Time20 ns32 ns20 ns
Unit Weight1.340411 oz1.340411 oz1.340411 oz
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