STW40N60M2 vs STW40N20 vs STW40N60M2 40N60M2

 
PartNumberSTW40N60M2STW40N20STW40N60M2 40N60M2
DescriptionMOSFET N-chanel 600 V 0.078 Ohm typ 34 AMOSFET N-Ch 200 Volt 40 Amp
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V200 V-
Id Continuous Drain Current34 A40 A-
Rds On Drain Source Resistance88 mOhms45 mOhms-
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V20 V-
Qg Gate Charge57 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 W160 W-
ConfigurationSingleSingle-
PackagingTubeTube-
SeriesSTW40N60M2STB40N20-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time11 ns24 ns-
Product TypeMOSFETMOSFET-
Rise Time13.5 ns44 ns-
Factory Pack Quantity60030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time96 ns74 ns-
Typical Turn On Delay Time20.5 ns20 ns-
Unit Weight1.340411 oz1.340411 oz-
Channel Mode-Enhancement-
Height-20.15 mm-
Length-15.75 mm-
Type-MOSFET-
Width-5.15 mm-
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