STW40N60M2 vs STW40N60M2-4 vs STW40N60M2 40N60M2

 
PartNumberSTW40N60M2STW40N60M2-4STW40N60M2 40N60M2
DescriptionMOSFET N-chanel 600 V 0.078 Ohm typ 34 AMOSFET POWER MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance88 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge57 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
PackagingTube--
SeriesSTW40N60M2STW40N60M2-
Transistor Type1 N-Channel--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time11 ns--
Product TypeMOSFETMOSFET-
Rise Time13.5 ns--
Factory Pack Quantity600600-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time96 ns--
Typical Turn On Delay Time20.5 ns--
Unit Weight1.340411 oz0.211644 oz-
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