STW50N65DM2AG vs STW50N10 vs STW50N65DM2AG 50N65DM2

 
PartNumberSTW50N65DM2AGSTW50N10STW50N65DM2AG 50N65DM2
DescriptionMOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET in a TO-247 packageMOSFET Transistor, N-Channel, TO-247AC
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current38 A--
Rds On Drain Source Resistance87 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge70 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameMDmesh--
Height5.15 mm--
Length20.15 mm--
ProductPower MOSFET--
SeriesSTW50N65DM2AG--
Transistor Type1 N-Channel--
TypeHigh Voltage--
Width15.75 mm--
BrandSTMicroelectronics--
Fall Time10.5 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity600--
SubcategoryMOSFETs--
Typical Turn Off Delay Time89 ns--
Typical Turn On Delay Time22.5 ns--
Unit Weight1.340411 oz--
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