STY139N65M5 vs STY130NF20D vs STY139N65M5 139N65M5

 
PartNumberSTY139N65M5STY130NF20DSTY139N65M5 139N65M5
DescriptionMOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130ADarlington Transistors MOSFET N-Ch 200V 0.01 Ohm 130A STripFET II
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseMax-247-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current130 A--
Rds On Drain Source Resistance17 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge363 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation625 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTubeTube-
SeriesSTY139N65M5N-channel STripFET-
Transistor Type1 N-Channel Power MOSFET1 N-Channel-
BrandSTMicroelectronics--
Fall Time37 ns250 ns-
Product TypeMOSFET--
Rise Time56 ns218 ns-
Factory Pack Quantity600--
SubcategoryMOSFETs--
Unit Weight1.340411 oz1.340411 oz-
Package Case-TO-247-3-
Pd Power Dissipation-450 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-130 A-
Vds Drain Source Breakdown Voltage-200 V-
Vgs th Gate Source Threshold Voltage-3 V-
Rds On Drain Source Resistance-10 mOhms-
Typical Turn Off Delay Time-283 ns-
Typical Turn On Delay Time-232 ns-
Qg Gate Charge-338 nC-
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