SUG80050E-GE3 vs SUG80050E vs SUG85D

 
PartNumberSUG80050E-GE3SUG80050ESUG85D
DescriptionMOSFET 150V Vds 20V Vgs TO-247
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance4.5 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge165 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation500 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min60 S--
Fall Time55 ns--
Product TypeMOSFET--
Rise Time44 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.211644 oz--
Top