Si7190ADP-T1-RE3 vs SI7190DP vs SI7190DP-T1

 
PartNumberSi7190ADP-T1-RE3SI7190DPSI7190DP-T1
DescriptionMOSFET 250V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current14.4 A--
Rds On Drain Source Resistance102 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation56.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
BrandVishay / Siliconix--
Forward Transconductance Min11 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time13 ns--
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