SIR182DP-T1-RE3 vs SiR180DP-T1-RE3 vs SIR182DP

 
PartNumberSIR182DP-T1-RE3SiR180DP-T1-RE3SIR182DP
DescriptionMOSFET 60V Vds 20V Vgs PowerPAK SO-8MOSFET 60V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current60 A60 A-
Rds On Drain Source Resistance2.3 mOhms2.05 mOhms-
Vgs th Gate Source Threshold Voltage3.6 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge42.2 nC87 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69.4 W83.3 W-
ConfigurationSingleSingle-
TradenameTrenchFET, PowerPAK--
PackagingReelReel-
SeriesSIRSIR-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time10 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time23 ns8 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns31 ns-
Typical Turn On Delay Time15 ns17 ns-
Channel Mode-Enhancement-
Forward Transconductance Min-35 S-
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