TIP29B vs TIP29B-BP vs TIP29B PBFREE

 
PartNumberTIP29BTIP29B-BPTIP29B PBFREE
DescriptionBipolar Transistors - BJT NPN Gen Purp PowerBipolar Transistors - BJT 1.0A 80VBipolar Transistors - BJT NPN 80Vcbo 5.0Vebo 80Vceo 1.0A 30W
ManufacturerCentral SemiconductorMicro Commercial Components (MCC)Central Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSTYY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Transistor PolarityNPNNPNNPN
Collector Emitter Voltage VCEO Max80 V80 V80 V
Collector Base Voltage VCBO80 V80 V80 V
Emitter Base Voltage VEBO5 V5 V5 V
Collector Emitter Saturation Voltage0.7 V-0.7 V
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT3 MHz3 MHz3 MHz
Minimum Operating Temperature- 65 C- 55 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesTIP29TIP29BTIP29
PackagingBulkTubeBulk
BrandCentral SemiconductorMicro Commercial Components (MCC)Central Semiconductor
Continuous Collector Current1 A-1 A
DC Collector/Base Gain hfe Min404015 at 1 A, 4 V
Pd Power Dissipation30 W30000 mW2 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity4001000400
SubcategoryTransistorsTransistorsTransistors
Part # AliasesTIN/LEAD TIP29B--
Unit Weight0.211644 oz0.081130 oz-
Configuration-SingleSingle
Height-9.02 mm (Max)-
Length-10.67 mm (Max)-
Width-4.82 mm (Max)-
Technology--Si
DC Current Gain hFE Max--75 at 1 A, 4 V
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