TS13002ACT A3G vs TS13002ACT B0G vs TS13002ACT

 
PartNumberTS13002ACT A3GTS13002ACT B0GTS13002ACT
DescriptionBipolar Transistors - BJT NPN 700V 0.3A High Voltage/SpeedBipolar Transistors - BJT TO-92, 700V 0.3A NPN Bplr TransBipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSY--
TechnologySi--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage1.5 V--
Maximum DC Collector Current0.3 A-0.3 A
Gain Bandwidth Product fT4 MHz-4 MHz (Min)
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
DC Current Gain hFE Max24--
PackagingAmmo Pack-Ammo Pack
BrandTaiwan SemiconductorTaiwan Semiconductor-
Continuous Collector Current0.3 A--
DC Collector/Base Gain hfe Min12--
Pd Power Dissipation0.6 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity2000--
SubcategoryTransistorsTransistors-
Series-TS13002ACT-
Part Aliases--A3G
Unit Weight--0.016000 oz
Package Case--TO-92-3
Pd Power Dissipation--600 mW
Collector Emitter Voltage VCEO Max--400 V
Collector Base Voltage VCBO--700 V
Emitter Base Voltage VEBO--9 V
DC Collector Base Gain hfe Min--15 at 10 mA at 10 V 20 at 400 mA at 10 V 6 at 1 A at 10 V
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