PartNumber | TS13002ACT A3G | TS13002ACT B0G | TS13002ACT |
Description | Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed | Bipolar Transistors - BJT TO-92, 700V 0.3A NPN Bplr Trans | Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-92-3 | - | - |
Transistor Polarity | NPN | - | NPN |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 400 V | - | - |
Collector Base Voltage VCBO | 700 V | - | - |
Emitter Base Voltage VEBO | 9 V | - | - |
Collector Emitter Saturation Voltage | 1.5 V | - | - |
Maximum DC Collector Current | 0.3 A | - | 0.3 A |
Gain Bandwidth Product fT | 4 MHz | - | 4 MHz (Min) |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
DC Current Gain hFE Max | 24 | - | - |
Packaging | Ammo Pack | - | Ammo Pack |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
Continuous Collector Current | 0.3 A | - | - |
DC Collector/Base Gain hfe Min | 12 | - | - |
Pd Power Dissipation | 0.6 W | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 2000 | - | - |
Subcategory | Transistors | Transistors | - |
Series | - | TS13002ACT | - |
Part Aliases | - | - | A3G |
Unit Weight | - | - | 0.016000 oz |
Package Case | - | - | TO-92-3 |
Pd Power Dissipation | - | - | 600 mW |
Collector Emitter Voltage VCEO Max | - | - | 400 V |
Collector Base Voltage VCBO | - | - | 700 V |
Emitter Base Voltage VEBO | - | - | 9 V |
DC Collector Base Gain hfe Min | - | - | 15 at 10 mA at 10 V 20 at 400 mA at 10 V 6 at 1 A at 10 V |