TSM060N03ECP ROG vs TSM060N03CP ROG vs TSM060N03PQ33 RGG

 
PartNumberTSM060N03ECP ROGTSM060N03CP ROGTSM060N03PQ33 RGG
DescriptionMOSFET 30V 70Amp N channel Power Mosfet with ESD protectionMOSFET 30V 80Amp N channel Power MosfetMOSFET 30V, 60A, Single N-Channel Power MOSFET
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3PDFN33-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current70 A80 A15 A
Rds On Drain Source Resistance4.8 mOhms4.8 mOhms4.8 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1.2 V
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge11.1 nC11.1 nC25.4 nC
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation54 W54 W40 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time9.6 ns9.6 ns9.6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time14.5 ns14.5 ns14.5 ns
Factory Pack Quantity250025005000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time35.2 ns35.2 ns35.2 ns
Typical Turn On Delay Time7.5 ns7.5 ns7.5 ns
Unit Weight0.011993 oz0.011993 oz-
Minimum Operating Temperature--- 55 C
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