TSM130NB06CR RLG vs TSM130NB06LCR RLG vs TSM13N50ACI C0G

 
PartNumberTSM130NB06CR RLGTSM130NB06LCR RLGTSM13N50ACI C0G
DescriptionMOSFET 60V 51A 13mOhm N-Chan Pwr MOSFETMOSFET 60V 51A 13mOhm N-Chan Pwr MOSFETMOSFET 500V N channel Power Mosfet
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CasePDFN56-8PDFN56-8ITO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V500 V
Id Continuous Drain Current51 A51 A13 A
Rds On Drain Source Resistance13 mOhms13 mOhms380 mOhms
Vgs th Gate Source Threshold Voltage2 V1 V2 V
Vgs Gate Source Voltage20 V20 V10 V
Qg Gate Charge36 nC37 nC31 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 150 C
Pd Power Dissipation83 W83 W52 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesTSMTSM-
Transistor TypeSingle N-Channel Power MOSFETSingle N-Channel Power MOSFET1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Forward Transconductance Min45 S39 S-
Fall Time17 ns19 ns16 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time19 ns19 ns18 ns
Factory Pack Quantity250025001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time17 ns23 ns79 ns
Typical Turn On Delay Time3 ns2 ns32 ns
Unit Weight--0.059966 oz
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