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| PartNumber | TSM4NB65CI C0G | TSM4NB65CH C5G | TSM4NB65CH |
| Description | MOSFET 650V N channel Mosfet | MOSFET 650V N channel Mosfet | |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | ITO-220-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 4 A | 4 A | - |
| Rds On Drain Source Resistance | 2.7 Ohms | 2.7 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 3.6 V | 3.6 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 13.46 nC | 13.46 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 25 W | 50 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Fall Time | 19 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns | 20 ns | - |
| Factory Pack Quantity | 1000 | 1875 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 30 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Unit Weight | 0.059966 oz | 0.011993 oz | - |