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| PartNumber | TSM60N1R4CH | TSM60N1R4CP | TSM60N1R4CH C5G |
| Description | MOSFET Power MOSFET, N-CHAN 600V, 3.3A, 1400mOhm | MOSFET Power MOSFET, N-CHAN 600V, 3.3A, 1400mOhm | MOSFET 600V, 3.3A, 1.4 N Channel Power Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-251-3 | TO-252-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 3.3 A | 3.3 A | 3.3 A |
| Rds On Drain Source Resistance | 880 mOhms | 880 mOhms | 880 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Qg Gate Charge | 7.7 nC | 7.7 nC | 7.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 38 W | 38 W | 38 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 20 ns | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | 22 ns | 22 ns |
| Factory Pack Quantity | 1875 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 ns | 24 ns | 24 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns | 14 ns |
| Part # Aliases | C5G TSM60N1R4CH | ROG TSM60N1R4CP | - |
| Unit Weight | 0.011993 oz | 0.011993 oz | - |
| Product | - | - | Rectifiers |