TT8J11TCR vs TT8J11 vs TT8J11FU7TCR

 
PartNumberTT8J11TCRTT8J11TT8J11FU7TCR
DescriptionMOSFET 1.5V Drive Pch+Pch MOSFET
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSST-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance31 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type2 P-Channel--
BrandROHM Semiconductor--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time170 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesTT8J11--
Series---
Package Case-8-SMD, Flat Lead-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-TSST-
FET Type-2 P-Channel (Dual)-
Power Max-650mW-
Drain to Source Voltage Vdss-12V-
Input Capacitance Ciss Vds-2600pF @ 6V-
FET Feature-Logic Level Gate, 1.5V Drive-
Current Continuous Drain Id 25°C-3.5A-
Rds On Max Id Vgs-43 mOhm @ 3.5A, 4.5V-
Vgs th Max Id-1V @ 1mA-
Gate Charge Qg Vgs-22nC @ 4.5V-
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