PartNumber | TT8J2TR | TT8J2 | TT8J21 |
Description | MOSFET SW MOSFET MIDDLE PWR P CH -30V-2.5A | ||
Manufacturer | ROHM Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSST-8 | - | - |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 2.5 A | - | - |
Rds On Drain Source Resistance | 60 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 4.8 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.25 W | - | - |
Configuration | Dual | Dual Dual Drain | Dual Dual Drain |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
Transistor Type | 2 P-Channel | 2 P-Channel | 2 P-Channel |
Brand | ROHM Semiconductor | - | - |
Forward Transconductance Min | 1.8 S | - | - |
Fall Time | 14 ns | 30 ns | 30 ns |
Product Type | MOSFET | - | - |
Rise Time | 20 ns | 30 ns | 30 ns |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 35 ns | 120 ns | 120 ns |
Typical Turn On Delay Time | 7 ns | 9 ns | 9 ns |
Part # Aliases | TT8J2 | - | - |
Series | - | TT8J21 | TT8J21 |
Package Case | - | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
Operating Temperature | - | 150°C (TJ) | 150°C (TJ) |
Mounting Type | - | Surface Mount | Surface Mount |
Supplier Device Package | - | 8-TSST | 8-TSST |
FET Type | - | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
Power Max | - | 650mW | 650mW |
Drain to Source Voltage Vdss | - | 20V | 20V |
Input Capacitance Ciss Vds | - | 1270pF @ 10V | 1270pF @ 10V |
FET Feature | - | Logic Level Gate | Logic Level Gate |
Current Continuous Drain Id 25°C | - | 2.5A | 2.5A |
Rds On Max Id Vgs | - | 68 mOhm @ 2.5A, 4.5V | 68 mOhm @ 2.5A, 4.5V |
Vgs th Max Id | - | 1V @ 1mA | 1V @ 1mA |
Gate Charge Qg Vgs | - | 12nC @ 4.5V | 12nC @ 4.5V |
Pd Power Dissipation | - | 1.25 W | 1.25 W |
Vgs Gate Source Voltage | - | 10 V | 10 V |
Id Continuous Drain Current | - | 2.5 A | 2.5 A |
Vds Drain Source Breakdown Voltage | - | - 20 V | - 20 V |
Rds On Drain Source Resistance | - | 68 mOhms | 68 mOhms |