TT8M1TR vs TT8M vs TT8M11TCR

 
PartNumberTT8M1TRTT8MTT8M11TCR
DescriptionMOSFET 1.5V Drive Nch+Pch MOSFET
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTSST-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance52 mOhms, 49 mOhms--
Vgs th Gate Source Threshold Voltage300 mV, 1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge3.6 nC, 12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type1 N-Channel, 1 P-Channel--
BrandROHM Semiconductor--
Fall Time17 ns, 85 ns--
Product TypeMOSFET--
Rise Time17 ns, 30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns, 120 ns--
Typical Turn On Delay Time9 ns, 9 ns--
Part # AliasesTT8M1--
Series-TT8M1-
Package Case-8-SMD, Flat Lead-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-TSST-
FET Type-N and P-Channel-
Power Max-1W-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-260pF @ 10V-
FET Feature-Logic Level Gate, 1.5V Drive-
Current Continuous Drain Id 25°C-2.5A-
Rds On Max Id Vgs-72 mOhm @ 2.5A, 4.5V-
Vgs th Max Id-1V @ 1mA-
Gate Charge Qg Vgs-3.6nC @ 4.5V-
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