US6M2TR vs US6M2 vs US6M2 , MAX6825VUK

 
PartNumberUS6M2TRUS6M2US6M2 , MAX6825VUK
DescriptionMOSFET N+P 20V 1.5A/1A
ManufacturerROHM SemiconductorROHM-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363T-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V, 30 V--
Id Continuous Drain Current1 A, 1.5 A--
Rds On Drain Source Resistance240 mOhms, 390 mOhms--
Vgs th Gate Source Threshold Voltage700 mV, 500 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge1.6 nC, 2.1 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.77 mm--
Length2 mm--
SeriesUS6M2--
Transistor Type1 N-Channel MOSFET, 1 P-Channel MOSFET--
TypeMOSFET--
Width1.7 mm--
BrandROHM Semiconductor--
Fall Time6 ns, 10 ns--
Product TypeMOSFET--
Rise Time9 ns, 8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns, 25 ns--
Typical Turn On Delay Time7 ns, 9 ns--
Part # AliasesUS6M2--
Unit Weight0.000265 oz--
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