VND7NV04TR-E vs VND7NV04TR vs VND7NV04TR-E-CUT TAPE

 
PartNumberVND7NV04TR-EVND7NV04TRVND7NV04TR-E-CUT TAPE
DescriptionMOSFET N-Ch 42V 6A OmniFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETPMIC - Power Distribution Switches, Load Drivers-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage45 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance60 mOhms--
Qg Gate Charge18 nC--
Pd Power Dissipation60 W--
QualificationAEC-Q101--
PackagingReelDigi-ReelR Alternate Packaging-
SeriesVND7NV04OMNIFET II, VIPower-
TypeLow Side--
BrandSTMicroelectronics--
Forward Transconductance Min9 S--
Fall Time350 ns350 ns-
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time470 ns470 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Input Type-Non-Inverting-
Operating Temperature--40°C ~ 150°C (TJ)-
Output Type-N-Channel-
Features---
Interface-On/Off-
Supplier Device Package-D-Pak-
Ratio InputOutput-1899/12/30 1:01:00-
Number of Outputs-1-
Voltage Supply Vcc Vdd-Not Required-
Fault Protection-Current Limiting (Fixed), Over Temperature, Over Voltage-
Output Configuration-Low Side-
Rds On Typ-60 mOhm (Max)-
Voltage Load-36V (Max)-
Current Output Max-6A-
Switch Type-General Purpose-
Pd Power Dissipation-60 W-
Id Continuous Drain Current-6 A-
Vds Drain Source Breakdown Voltage-45 V-
Rds On Drain Source Resistance-60 mOhms-
Qg Gate Charge-18 nC-
Forward Transconductance Min-9 S-
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