VT6K1T2CR vs VT6K1 vs VT6K1T2CR/VMT6

 
PartNumberVT6K1T2CRVT6K1VT6K1T2CR/VMT6
DescriptionMOSFET SMALL SIGNAL TR
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseVMT-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance3.5 Ohms--
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage4.5 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
SeriesVT6K1--
Transistor Type2 N-Channel MOSFET--
BrandROHM Semiconductor--
Fall Time38 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity8000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesVT6K1--
Package Case-6-SMD, Flat Leads-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-VMT6-
FET Type-2 N-Channel (Dual)-
Power Max-120mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-7.1pF @ 10V-
FET Feature-Logic Level Gate, 1.2V Drive-
Current Continuous Drain Id 25°C-100mA-
Rds On Max Id Vgs-3.5 Ohm @ 100mA, 4.5V-
Vgs th Max Id-1V @ 100μA-
Gate Charge Qg Vgs---
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