ZHB6718TA vs ZHB6718 vs ZHB6718GTA

 
PartNumberZHB6718TAZHB6718ZHB6718GTA
DescriptionBipolar Transistors - BJT H-Bridge-20VSpecial-purpose Transistor, 20v V(br)ceo, 2.5a I(c), So
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSM-8--
Transistor PolarityNPN, PNP--
ConfigurationQuad--
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage130 mV--
Maximum DC Collector Current2.5 A--
Gain Bandwidth Product fT140 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesZHB6718--
DC Current Gain hFE Max200--
Height1.6 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current2.5 A--
DC Collector/Base Gain hfe Min200 at 10 mA, 2 V at NPN, 300 at 100 mA, 2 V at NPN, 200 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 150 at 2 A, 2 V at PNP, 35 at 4 A, 2 V at PNP--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.035274 oz--
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