ZTX1047A vs ZTX10470ASTOB vs ZTX10470ASTOA

 
PartNumberZTX1047AZTX10470ASTOBZTX10470ASTOA
DescriptionBipolar Transistors - BJT NPN High Gain & CrntBipolar Transistors - BJT NPN High Gain & CrntBipolar Transistors - BJT NPN High Gain & Crnt
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Transistor PolarityNPNNPNNPN
ConfigurationSingle--
Collector Emitter Voltage VCEO Max10 V--
Collector Base Voltage VCBO35 V-35 V
Emitter Base Voltage VEBO5 V-5 V
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max280 at 10 mA, 2 V--
Height4.01 mm4.01 mm4.01 mm
Length4.77 mm4.77 mm4.77 mm
PackagingBulkBulkBulk
Width2.41 mm2.41 mm2.41 mm
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Continuous Collector Current4 A-4 A
DC Collector/Base Gain hfe Min280 at 10 mA, 2 V, 300 at 1 A, 2 V, 240 at 4 A, 2 V, 150 at 10 A, 2 V, 60 at 20 A, 2 V--
Pd Power Dissipation1 W-1 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity400040004000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.016000 oz0.016000 oz0.016000 oz
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