ZTX1147ASTOB vs ZTX1147ASTOA vs ZTX1147ASTZ

PartNumber	ZTX1147ASTOB	ZTX1147ASTOA	ZTX1147ASTZ
Description	Bipolar Transistors - BJT PNP High Gain & Crnt	Bipolar Transistors - BJT PNP High Gain & Crnt	Bipolar Transistors - BJT PNP High Gain & Crnt
Manufacturer	Diodes Incorporated	-	Diodes Incorporated
Product Category	Bipolar Transistors - BJT	-	Transistors - Bipolar (BJT) - RF
RoHS	Y	-	-
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-92-3	-	-
Transistor Polarity	PNP	-	PNP
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	- 12 V	-	-
Collector Base Voltage VCBO	- 15 V	-	-
Emitter Base Voltage VEBO	- 5 V	-	-
Collector Emitter Saturation Voltage	- 175 mV	-	- 175 mV
Maximum DC Collector Current	4 A	-	4 A
Gain Bandwidth Product fT	115 MHz	-	115 MHz
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
DC Current Gain hFE Max	270 at 10 mA, 2 V	-	270 at 10 mA at 2 V
Height	4.01 mm	-	-
Length	4.77 mm	-	-
Packaging	Bulk	-	Reel
Width	2.41 mm	-	-
Brand	Diodes Incorporated	-	-
Continuous Collector Current	- 4 A	-	- 4 A
DC Collector/Base Gain hfe Min	270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 2 A, 2 V, 170 at 4 A, 2 V, 90 at 10 A, 2 V	-	-
Pd Power Dissipation	1 W	-	-
Product Type	BJTs - Bipolar Transistors	-	-
Factory Pack Quantity	4000	-	-
Subcategory	Transistors	-	-
Unit Weight	0.016000 oz	-	0.016000 oz
Series	-	-	ZTX1147
Package Case	-	-	TO-92
Pd Power Dissipation	-	-	1 W
Collector Emitter Voltage VCEO Max	-	-	- 12 V
Collector Base Voltage VCBO	-	-	- 15 V
Emitter Base Voltage VEBO	-	-	- 5 V
DC Collector Base Gain hfe Min	-	-	270 at 10 mA at 2 V 250 at 500 mA at 2 V 200 at 2 A at 2 V 170 at 4 A at 2 V 90 at 10 A at 2 V