ZTX1149ASTZ vs ZTX1149ASTOA vs ZTX1149ASTOB

PartNumber	ZTX1149ASTZ	ZTX1149ASTOA	ZTX1149ASTOB
Description	Bipolar Transistors - BJT PNP High Gain & Crnt	Bipolar Transistors - BJT PNP High Gain & Crnt	Bipolar Transistors - BJT PNP High Gain & Crnt
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	Y
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3
Transistor Polarity	PNP	PNP	PNP
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	- 25 V	- 25 V	- 25 V
Collector Base Voltage VCBO	- 30 V	- 30 V	- 30 V
Emitter Base Voltage VEBO	- 5 V	- 5 V	- 5 V
Collector Emitter Saturation Voltage	- 200 mV	- 200 mV	- 200 mV
Maximum DC Collector Current	3 A	3 A	3 A
Gain Bandwidth Product fT	135 MHz	135 MHz	135 MHz
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	ZTX1149	-	-
DC Current Gain hFE Max	270 at 10 mA, 2 V	270 at 10 mA, 2 V	270 at 10 mA, 2 V
Height	4.01 mm	4.01 mm	4.01 mm
Length	4.77 mm	4.77 mm	4.77 mm
Packaging	Bulk	Bulk	Bulk
Width	2.41 mm	2.41 mm	2.41 mm
Brand	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Continuous Collector Current	- 3 A	- 3 A	- 3 A
DC Collector/Base Gain hfe Min	270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V	270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V	270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V
Pd Power Dissipation	1 W	1 W	1 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	2000	2000	4000
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.016000 oz	0.016000 oz	0.016000 oz