 |  |  | |
| PartNumber | ZTX658 | ZTX658QSTZ | ZTX658S |
| Description | Bipolar Transistors - BJT NPN Super E-Line | Bipolar Transistors - BJT Pwr Hi Voltage Transistor | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | - |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 400 V | 400 V | - |
| Collector Base Voltage VCBO | 400 V | 400 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | 0.5 V |
| Maximum DC Collector Current | 0.5 A | 500 mA | 0.5 A |
| Gain Bandwidth Product fT | 50 MHz | 50 MHz | 50 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 200 C | + 150 C |
| Series | ZTX658 | - | ZTX658 |
| DC Current Gain hFE Max | 50 at 1 mA, 5 V | - | 50 at 1 mA at 5 V |
| Height | 4.01 mm | - | - |
| Length | 4.77 mm | - | - |
| Packaging | Bulk | Ammo Pack | Reel |
| Width | 2.41 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Continuous Collector Current | 0.5 A | 500 mA | 0.5 A |
| DC Collector/Base Gain hfe Min | 50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V | 40 | - |
| Pd Power Dissipation | 1 W | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 4000 | 2000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.016000 oz | - | 0.016000 oz |
| Technology | - | Si | - |
| Package Case | - | - | TO-92 |
| Pd Power Dissipation | - | - | 1 W |
| Collector Emitter Voltage VCEO Max | - | - | 400 V |
| Collector Base Voltage VCBO | - | - | 400 V |
| Emitter Base Voltage VEBO | - | - | 5 V |