ZTX658STZ vs ZTX658STOA vs ZTX658STOB

PartNumber	ZTX658STZ	ZTX658STOA	ZTX658STOB
Description	Bipolar Transistors - BJT NPN Super E-Line	Bipolar Transistors - BJT NPN Super E-Line	Bipolar Transistors - BJT NPN Super E-Line
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-92-3	TO-92-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	400 V	400 V	-
Collector Base Voltage VCBO	400 V	400 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	0.5 V	-	-
Maximum DC Collector Current	0.5 A	0.5 A	-
Gain Bandwidth Product fT	50 MHz	50 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	ZTX658	-	-
DC Current Gain hFE Max	50 at 1 mA, 5 V	50 at 1 mA, 5 V	-
Height	4.01 mm	4.01 mm	-
Length	4.77 mm	4.77 mm	-
Packaging	Reel	Bulk	-
Width	2.41 mm	2.41 mm	-
Brand	Diodes Incorporated	Diodes Incorporated	-
Continuous Collector Current	0.5 A	0.5 A	-
Pd Power Dissipation	1 W	1 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	2000	2000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.016000 oz	0.016000 oz	-
DC Collector/Base Gain hfe Min	-	50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V	-