ZTX692B vs ZTX692BSTOA vs ZTX692BSTOB

 
PartNumberZTX692BZTX692BSTOAZTX692BSTOB
DescriptionBipolar Transistors - BJT NPN Super E-LineBipolar Transistors - BJT NPN Super E-LineBipolar Transistors - BJT NPN Super E-Line
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max70 V--
Collector Base Voltage VCBO70 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesZTX692--
DC Current Gain hFE Max500 at 100 mA, 2 V--
Height4.01 mm--
Length4.77 mm--
PackagingBulk--
Width2.41 mm--
BrandDiodes Incorporated--
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min500 at 100 mA, 2 V, 400 at 500 mA, 2 V, 150 at 1 A, 2 V--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.016000 oz--
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