ZTX694BSTOA vs ZTX694BSTOB vs ZTX694BSTZ

PartNumber	ZTX694BSTOA	ZTX694BSTOB	ZTX694BSTZ
Description	Bipolar Transistors - BJT NPN Super E-Line	Bipolar Transistors - BJT NPN Super E-Line	Bipolar Transistors - BJT NPN Super E-Line
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	Y
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	120 V	120 V	120 V
Collector Base Voltage VCBO	120 V	120 V	120 V
Emitter Base Voltage VEBO	5 V	5 V	5 V
Collector Emitter Saturation Voltage	0.5 V	0.5 V	0.5 V
Maximum DC Collector Current	0.5 A	0.5 A	0.5 A
Gain Bandwidth Product fT	130 MHz	130 MHz	130 MHz
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
DC Current Gain hFE Max	500 at 100 mA, 2 V	500 at 100 mA, 2 V	500 at 100 mA, 2 V
Height	4.01 mm	4.01 mm	4.01 mm
Length	4.77 mm	4.77 mm	4.77 mm
Packaging	Bulk	Bulk	Bulk
Width	2.41 mm	2.41 mm	2.41 mm
Brand	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Continuous Collector Current	0.5 A	0.5 A	0.5 A
DC Collector/Base Gain hfe Min	500 at 100 mA, 2 V, 400 at 200 mA, 2 V, 150 at 400 mA, 2 V	-	500 at 100 mA, 2 V, 400 at 200 mA, 2 V, 150 at 400 mA, 2 V
Pd Power Dissipation	1 W	1 W	1 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	2000	4000	2000
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.016000 oz	0.016000 oz	0.016000 oz
Series	-	-	ZTX694