PartNumber | ZTX696B | ZTX696BST | ZTX696BST0A |
Description | Bipolar Transistors - BJT NPN Super E-Line | ||
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-92-3 | - | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 180 V | - | - |
Collector Base Voltage VCBO | 180 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 0.25 V | 0.25 V | - |
Maximum DC Collector Current | 0.5 A | 0.5 A | - |
Gain Bandwidth Product fT | 70 MHz | 70 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | ZTX696 | ZTX6 | - |
DC Current Gain hFE Max | 500 at 100 mA, 5 V | 500 at 100 mA at 5 V | - |
Height | 4.01 mm | - | - |
Length | 4.77 mm | - | - |
Packaging | Bulk | Bulk | - |
Width | 2.41 mm | - | - |
Brand | Diodes Incorporated | - | - |
Continuous Collector Current | 0.5 A | 0.5 A | - |
DC Collector/Base Gain hfe Min | 500 at 100 mA, 5 V, 150 at 200 mA, 5 V | - | - |
Pd Power Dissipation | 1 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.016000 oz | 0.016000 oz | - |
Package Case | - | TO-92 | - |
Pd Power Dissipation | - | 1 W | - |
Collector Emitter Voltage VCEO Max | - | 180 V | - |
Collector Base Voltage VCBO | - | 180 V | - |
Emitter Base Voltage VEBO | - | 5 V | - |
DC Collector Base Gain hfe Min | - | 500 at 100 mA at 5 V 150 at 200 mA at 5 V | - |