ZTX696B vs ZTX696BST vs ZTX696BST0A

 
PartNumberZTX696BZTX696BSTZTX696BST0A
DescriptionBipolar Transistors - BJT NPN Super E-Line
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max180 V--
Collector Base Voltage VCBO180 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.25 V0.25 V-
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT70 MHz70 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZTX696ZTX6-
DC Current Gain hFE Max500 at 100 mA, 5 V500 at 100 mA at 5 V-
Height4.01 mm--
Length4.77 mm--
PackagingBulkBulk-
Width2.41 mm--
BrandDiodes Incorporated--
Continuous Collector Current0.5 A0.5 A-
DC Collector/Base Gain hfe Min500 at 100 mA, 5 V, 150 at 200 mA, 5 V--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.016000 oz0.016000 oz-
Package Case-TO-92-
Pd Power Dissipation-1 W-
Collector Emitter Voltage VCEO Max-180 V-
Collector Base Voltage VCBO-180 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-500 at 100 mA at 5 V 150 at 200 mA at 5 V-
Top