PartNumber | ZTX853 | ZTX853/ZTX953 | ZTX853QSTZ |
Description | Bipolar Transistors - BJT NPN Medium Power | ||
Manufacturer | Diodes Incorporated | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-92-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Collector Base Voltage VCBO | 200 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Collector Emitter Saturation Voltage | 160 mV | - | - |
Maximum DC Collector Current | 4 A | - | - |
Gain Bandwidth Product fT | 130 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | ZTX853 | - | - |
Height | 4.01 mm | - | - |
Length | 4.77 mm | - | - |
Packaging | Bulk | - | - |
Width | 2.41 mm | - | - |
Brand | Diodes Incorporated | - | - |
Continuous Collector Current | 4 A | - | - |
Pd Power Dissipation | 1.2 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.016000 oz | - | - |