ZTX968STOA vs ZTX968STOB vs ZTX968STZ

PartNumber	ZTX968STOA	ZTX968STOB	ZTX968STZ
Description	Bipolar Transistors - BJT PNP Big Chip SELine	Bipolar Transistors - BJT PNP Big Chip SELine	Bipolar Transistors - BJT PNP Big Chip SELine
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Transistors - Bipolar (BJT) - RF
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	-
Transistor Polarity	PNP	PNP	PNP
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	- 12 V	- 12 V	-
Collector Base Voltage VCBO	- 15 V	- 15 V	-
Emitter Base Voltage VEBO	- 6 V	- 6 V	-
Collector Emitter Saturation Voltage	- 220 mV	-	- 220 mV
Maximum DC Collector Current	4.5 A	4.5 A	4.5 A
Gain Bandwidth Product fT	80 MHz	80 MHz	80 MHz
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
DC Current Gain hFE Max	300 at 10 mA, 1 V	300 at 10 mA, 1 V	300 at 10 mA at 1 V
Height	4.01 mm	4.01 mm	-
Length	4.77 mm	4.77 mm	-
Packaging	Bulk	Bulk	Bulk
Width	2.41 mm	2.41 mm	-
Brand	Diodes Incorporated	Diodes Incorporated	-
Continuous Collector Current	- 4.5 A	- 4.5 A	- 4.5 A
Pd Power Dissipation	1.2 W	1.2 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	4000	4000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.016000 oz	0.016000 oz	0.016000 oz
Series	-	-	ZTX9
Package Case	-	-	TO-92
Pd Power Dissipation	-	-	1.2 W
Collector Emitter Voltage VCEO Max	-	-	- 12 V
Collector Base Voltage VCBO	-	-	- 15 V
Emitter Base Voltage VEBO	-	-	- 6 V
DC Collector Base Gain hfe Min	-	-	300 at 10 mA at 1 V 300 at 500 mA at 1 V 200 at 5 A at 1 V 150 at 10 A at 1 V