ZXM62P03E6TA vs ZXM62P03E6 vs ZXM62P03E6CT

 
PartNumberZXM62P03E6TAZXM62P03E6ZXM62P03E6CT
DescriptionMOSFET 30V P-Chnl HDMOSMOSFET, P CHANNEL, 30V, -1.5A, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.5A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.11ohm, Rds(on) Test Voltage Vgs:10V
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current1.5 A--
Rds On Drain Source Resistance150 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge10.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation625 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.3 mm--
Length3.1 mm--
ProductMOSFET Small Signal--
SeriesZXM62P0--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.8 mm--
BrandDiodes Incorporated--
Forward Transconductance Min1.1 S--
Fall Time10.3 ns--
Product TypeMOSFET--
Rise Time6.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.9 ns--
Typical Turn On Delay Time2.8 ns--
Unit Weight0.000529 oz--
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