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| PartNumber | ZXMD63C03X | ZXMD63C03XM | ZXMD63C03XTA |
| Description | MOSFET, DUAL, NP, MSOP8, Transistor Polarity:N and P Channel, Continuous Drain Current Id:2.3A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.135ohm, Rds(on) Test Voltage Vgs:10V, Thresh | Darlington Transistors MOSFET 30V N&P Chnl HDMOS | |
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | FETs - Arrays | - | FETs - Arrays |
| Series | ZXMD63 | - | ZXMD63 |
| Packaging | Digi-ReelR Alternate Packaging | - | Digi-ReelR Alternate Packaging |
| Unit Weight | 0.004938 oz | - | 0.004938 oz |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | - | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Technology | Si | - | Si |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | - | Surface Mount |
| Number of Channels | 2 Channel | - | 2 Channel |
| Supplier Device Package | 8-MSOP | - | 8-MSOP |
| Configuration | Dual Dual Drain | - | Dual Dual Drain |
| FET Type | N and P-Channel | - | N and P-Channel |
| Power Max | 1.04W | - | 1.04W |
| Transistor Type | 1 N-Channel 1 P-Channel | - | 1 N-Channel 1 P-Channel |
| Drain to Source Voltage Vdss | 30V | - | 30V |
| Input Capacitance Ciss Vds | 290pF @ 25V | - | 290pF @ 25V |
| FET Feature | Logic Level Gate | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | - |
| Rds On Max Id Vgs | 135 mOhm @ 1.7A, 10V | - | 135 mOhm @ 1.7A, 10V |
| Vgs th Max Id | 1V @ 250μA (Min) | - | 1V @ 250μA (Min) |
| Gate Charge Qg Vgs | 8nC @ 10V | - | 8nC @ 10V |
| Pd Power Dissipation | 870 mW | - | 870 mW |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 4.1 ns 4.8 ns | - | 4.1 ns 4.8 ns |
| Rise Time | 4.1 ns 4.8 ns | - | 4.1 ns 4.8 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 2.3 A - 2 A | - | 2.3 A - 2 A |
| Vds Drain Source Breakdown Voltage | 30 V | - | 30 V |
| Rds On Drain Source Resistance | 135 mOhms 185 mOhms | - | 135 mOhms 185 mOhms |
| Transistor Polarity | N-Channel P-Channel | - | N-Channel P-Channel |
| Typical Turn Off Delay Time | 9.6 ns 13.1 ns | - | 9.6 ns 13.1 ns |
| Typical Turn On Delay Time | 2.5 ns 2.6 ns | - | 2.5 ns 2.6 ns |
| Channel Mode | Enhancement | - | Enhancement |