ZXMHC6A07T8TA vs ZXMHC6A07T8 vs ZXMHC6A07T8TA-CUT TAPE

 
PartNumberZXMHC6A07T8TAZXMHC6A07T8ZXMHC6A07T8TA-CUT TAPE
DescriptionMOSFET 60V UMOS H-Bridge
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSM-8--
Number of Channels4 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.8 A, 1.5 A--
Rds On Drain Source Resistance300 mOhms, 425 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge3.2 nC, 5.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.3 W--
ConfigurationQuad--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.7 mm--
ProductMOSFET Small Signal--
SeriesZXMHC6A--
Transistor Type2 N-Channel, 2 P-Channel--
TypeMOSFET--
Width3.7 mm--
BrandDiodes Incorporated--
Forward Transconductance Min2.3 S, 1.8 S--
Fall Time2 ns, 5.8 ns--
Product TypeMOSFET--
Rise Time1.4 ns, 2.3 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time4.9 ns, 13 ns--
Typical Turn On Delay Time1.8 ns, 1.6 ns--
Unit Weight0.002610 oz--
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