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| PartNumber | ZXMN10A07ZTA | ZXMN10A07Z | ZXMN10A07ZTA-CUT TAPE |
| Description | MOSFET 100V N-Chnl UMOS | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-89-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Rds On Drain Source Resistance | 900 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 2.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.6 W | - | - |
| Configuration | Single | Single Dual Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Cut Tape (CT) Alternate Packaging | - |
| Height | 1.6 mm | - | - |
| Length | 4.6 mm | - | - |
| Series | ZXMN10A | ZXMN10A | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 2.6 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 1.6 S | - | - |
| Fall Time | 2.1 ns | 2.1 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 1.5 ns | 1.5 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 4.1 ns | 4.1 ns | - |
| Typical Turn On Delay Time | 1.8 ns | 1.8 ns | - |
| Unit Weight | 0.004603 oz | 0.004603 oz | - |
| Package Case | - | TO-243AA | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-89-3 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.5W | - |
| Drain to Source Voltage Vdss | - | 100V | - |
| Input Capacitance Ciss Vds | - | 138pF @ 50V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 1A (Ta) | - |
| Rds On Max Id Vgs | - | 700 mOhm @ 1.5A, 10V | - |
| Vgs th Max Id | - | 4V @ 250μA | - |
| Gate Charge Qg Vgs | - | 2.9nC @ 10V | - |
| Pd Power Dissipation | - | 2.6 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 1.4 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Rds On Drain Source Resistance | - | 900 mOhms | - |