ZXMN10A08GTA vs ZXMN10A08G vs ZXMN10A08GTA-CUT TAPE

 
PartNumberZXMN10A08GTAZXMN10A08GZXMN10A08GTA-CUT TAPE
DescriptionMOSFET 100V N-Channel 2A MOSFET
ManufacturerDiodes IncorporatedDIODES-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current2.9 A--
Rds On Drain Source Resistance250 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge7.7 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W--
ConfigurationSingleSingle Dual Drain-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.65 mm--
Length6.7 mm--
SeriesZXMN10ZXMN10-
Transistor Type1 N-Channel1 N-Channel-
Width3.7 mm--
BrandDiodes Incorporated--
Forward Transconductance Min5 S--
Fall Time3.2 ns3.2 ns-
Product TypeMOSFET--
Rise Time2.2 ns2.2 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8 ns8 ns-
Typical Turn On Delay Time3.4 ns3.4 ns-
Unit Weight0.003951 oz0.000282 oz-
Package Case-SOT-223-3-
Pd Power Dissipation-2 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-2.9 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-250 mOhms-
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