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| PartNumber | ZXMN10B08E6TA | ZXMN10B08E6TAPBF | ZXMN10B08E6TA-CUT TAPE |
| Description | MOSFET 100V N-Chnl UMOS | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-26-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.9 A | - | - |
| Rds On Drain Source Resistance | 230 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.3 mm | - | - |
| Length | 3.1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | ZXMN10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.8 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 2.1 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.1 ns | - | - |
| Typical Turn On Delay Time | 2.9 ns | - | - |
| Unit Weight | 0.000529 oz | - | - |