ZXMN2F30FHTA vs ZXMN2F30FHQTA vs ZXMN2F30FHTA-CUT TAPE

 
PartNumberZXMN2F30FHTAZXMN2F30FHQTAZXMN2F30FHTA-CUT TAPE
DescriptionMOSFET 20V N-Channel Enhance. Mode MOSFETMOSFET MOSFET BVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.9 A--
Rds On Drain Source Resistance45 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge---
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.4 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Height1.02 mm--
Length3.04 mm--
ProductMOSFET Small Signal--
SeriesZXMN2F30--
Transistor Type1 N-Channel--
Width1.4 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min8.6 S--
Fall Time5.6 ns--
Product TypeMOSFETMOSFET-
Rise Time5.6 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19.4 ns--
Typical Turn On Delay Time2.9 ns--
Unit Weight0.000282 oz--
Qualification-AEC-Q101-
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