ZXMN3A14FQTA vs ZXMN3A14FTA-CUT TAPE vs ZXMN3A14FTA

 
PartNumberZXMN3A14FQTAZXMN3A14FTA-CUT TAPEZXMN3A14FTA
DescriptionMOSFET MOSFET BVDSS 25V-30VIGBT Transistors MOSFET N Channel
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
QualificationAEC-Q101--
PackagingReel-Digi-ReelR Alternate Packaging
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000282 oz-0.000282 oz
Series--ZXMN3A1
Package Case--TO-236-3, SC-59, SOT-23-3
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--SOT-23-3
Configuration--Single
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--1W
Transistor Type--1 N-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--448pF @ 15V
FET Feature--Standard
Current Continuous Drain Id 25°C--3.2A (Ta)
Rds On Max Id Vgs--65 mOhm @ 3.2A, 10V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--8.6nC @ 10V
Pd Power Dissipation--1 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--5.3 ns
Rise Time--2.5 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--3.9 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--95 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--13.1 ns
Typical Turn On Delay Time--2.4 ns
Channel Mode--Enhancement
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