PartNumber | ZXMN4A06G | ZXMN4A06GQ | ZXMN4A06GQTA |
Description | MOSFET BVDSS: 31V40V SOT223 T&R 1K | ||
Manufacturer | Diodes Incorporated | - | - |
Product Category | FETs - Single | - | - |
Series | ZXMN4A | - | - |
Packaging | Cut Tape (CT) Alternate Packaging | - | - |
Unit Weight | 0.000282 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | TO-261-4, TO-261AA | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 1 Channel | - | - |
Supplier Device Package | SOT-223 | - | - |
Configuration | Single Dual Drain | - | - |
FET Type | MOSFET N-Channel, Metal Oxide | - | - |
Power Max | 2W | - | - |
Transistor Type | 1 N-Channel | - | - |
Drain to Source Voltage Vdss | 40V | - | - |
Input Capacitance Ciss Vds | 770pF @ 40V | - | - |
FET Feature | Standard | - | - |
Current Continuous Drain Id 25°C | 5A (Ta) | - | - |
Rds On Max Id Vgs | 50 mOhm @ 4.5A, 10V | - | - |
Vgs th Max Id | 1V @ 250μA | - | - |
Gate Charge Qg Vgs | 18.2nC @ 10V | - | - |
Pd Power Dissipation | 3.9 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 7.35 ns | - | - |
Rise Time | 4.45 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 7 A | - | - |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Rds On Drain Source Resistance | 75 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 28.61 ns | - | - |
Typical Turn On Delay Time | 2.55 ns | - | - |
Channel Mode | Enhancement | - | - |