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| PartNumber | ZXMN6A08E6QTA | ZXMN6A08 | ZXMN6A08E6 , LN2117B025M |
| Description | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-26-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 2.5 A | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 5.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 8.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Series | ZXMN6 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 6.6 S | - | - |
| Fall Time | 4.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.3 ns | - | - |
| Typical Turn On Delay Time | 2.6 ns | - | - |