PartNumber | ZXMN6A08E6TA | ZXMN6A08E6QTA | ZXMN6A08E6 , LN2117B025M |
Description | MOSFET 60V N-Chnl UMOS | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-26-6 | SOT-26-6 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 3.5 A | 2.5 A | - |
Rds On Drain Source Resistance | 80 mOhms | 150 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 5.8 nC | 5.8 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.1 W | 8.8 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1.3 mm | - | - |
Length | 3.1 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | ZXMN6A0 | ZXMN6 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | MOSFET | - | - |
Width | 1.8 mm | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | 6.6 S | 6.6 S | - |
Fall Time | 4.6 ns | 4.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 2.1 ns | 2.1 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 12.3 ns | 12.3 ns | - |
Typical Turn On Delay Time | 2.6 ns | 2.6 ns | - |
Unit Weight | 0.000282 oz | - | - |
Qualification | - | AEC-Q101 | - |