 | | | |
| PartNumber | ZXMN6A08GTA | ZXMN6A08GQTA | ZXMN6A08GQTC |
| Description | MOSFET 60V 3.8A N-Channel MOSFET | MOSFET MOSFET BVDSS 41V 60V | MOSFET MOSFET BVDSS 41V 60V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-3 | SOT-223-4 | SOT-223-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 5.3 A | 5.3 A | 5.3 A |
| Rds On Drain Source Resistance | 80 mOhms | 80 mOhms | 80 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 5.8 nC | 5.8 nC | 5.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.9 W | 3.9 W | 3.9 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.65 mm | - | - |
| Length | 6.7 mm | - | - |
| Series | ZXMN6A | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 6.6 S | 6.6 S | 6.6 S |
| Fall Time | 4.6 ns | 4.6 ns | 4.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.1 ns | 2.1 ns | 2.1 ns |
| Factory Pack Quantity | 1000 | 1000 | 4000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12.3 ns | 12.3 ns | 12.3 ns |
| Typical Turn On Delay Time | 2.6 ns | 2.6 ns | 2.6 ns |
| Unit Weight | 0.003951 oz | 0.003951 oz | 0.003951 oz |
| Qualification | - | AEC-Q101 | AEC-Q101 |