ZXTN07012EFFTA vs ZXTN07012EFF vs ZXTN07045EFF

PartNumber	ZXTN07012EFFTA	ZXTN07012EFF	ZXTN07045EFF
Description	Bipolar Transistors - BJT NPN 12V HIGH GAIN
Manufacturer	Diodes Incorporated	Diodes Incorporated	D
Product Category	Bipolar Transistors - BJT	Transistors (BJT) - Single	Transistors (BJT) - Single
RoHS	Y	-	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-23F-3	-	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	12 V	-	-
Collector Base Voltage VCBO	20 V	-	-
Emitter Base Voltage VEBO	7 V	-	-
Maximum DC Collector Current	4.5 A	4.5 A	-
Gain Bandwidth Product fT	220 MHz	220 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	ZXTN07012	ZXTN07012	-
DC Current Gain hFE Max	500	500	-
Height	1 mm	-	-
Length	3 mm	-	-
Packaging	Reel	Digi-ReelR Alternate Packaging	-
Width	1.7 mm	-	-
Brand	Diodes Incorporated	-	-
DC Collector/Base Gain hfe Min	500 at 100 mA, 2 V, 400 at 2 A, 2 V, 330 at 4.5 A, 2 V, 140 at 10 A, 2 V	-	-
Pd Power Dissipation	2000 mW	-	-
Product Type	BJTs - Bipolar Transistors	-	-
Factory Pack Quantity	3000	-	-
Subcategory	Transistors	-	-
Package Case	-	SOT-23-3 Flat Leads	-
Mounting Type	-	Surface Mount	-
Supplier Device Package	-	SOT-23F	-
Power Max	-	1.5W	-
Transistor Type	-	NPN	-
Current Collector Ic Max	-	4.5A	-
Voltage Collector Emitter Breakdown Max	-	12V	-
DC Current Gain hFE Min Ic Vce	-	500 @ 100mA, 2V	-
Vce Saturation Max Ib Ic	-	320mV @ 45mA, 4.5A	-
Current Collector Cutoff Max	-	50nA (ICBO)	-
Frequency Transition	-	220MHz	-
Pd Power Dissipation	-	2000 mW	-
Collector Emitter Voltage VCEO Max	-	12 V	-
Collector Base Voltage VCBO	-	20 V	-
Emitter Base Voltage VEBO	-	7 V	-
DC Collector Base Gain hfe Min	-	500 at 0.1 A at 2 V 400 at 2 A at 2 V 330 at 4.5 A at 2 V 140 at 10 A at 2 V	-